Datasheet Details
| Part number | HYG050N13NS1B6 |
|---|---|
| Manufacturer | HOOYI |
| File Size | 1.41 MB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet | HYG050N13NS1B6-HOOYI.pdf |
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Overview: HYG050N13NS1B6 Feature 135V/200A RDS(ON)=3.8mΩ(typ.) @ VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) Applications Power Switching application .
| Part number | HYG050N13NS1B6 |
|---|---|
| Manufacturer | HOOYI |
| File Size | 1.41 MB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet | HYG050N13NS1B6-HOOYI.pdf |
|
|
|
Pin7 Pin1 TO-263-6L Pin4 Pin1 Ordering and Marking Information B6 G050N13 XYMXXXXXX Package Code B6:TO-263-6L Date Code XYMXXXXXX Pin2,3,5,6,7 N-Channel MOSFET Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish;
which are fully compliant with RoHS.
HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
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