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HYG050N13NS1B6 - N-Channel Enhancement Mode MOSFET

General Description

Pin7 Pin1 TO-263-6L Pin4 Pin1 Ordering and Marking Information B6 G050N13 XYMXXXXXX Package Code B6:TO-263-6L Date Code XYMXXXXXX Pin2,3,5,6,7 N-Channel MOSFET Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are full

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Datasheet Details

Part number HYG050N13NS1B6
Manufacturer HOOYI
File Size 1.41 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG050N13NS1B6 Datasheet

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HYG050N13NS1B6 Feature  135V/200A RDS(ON)=3.8mΩ(typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Available (RoHS Compliant) Applications  Power Switching application  Uninterruptible Power Supply N-Channel Enhancement Mode MOSFET Pin Description Pin7 Pin1 TO-263-6L Pin4 Pin1 Ordering and Marking Information B6 G050N13 XYMXXXXXX Package Code B6:TO-263-6L Date Code XYMXXXXXX Pin2,3,5,6,7 N-Channel MOSFET Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.