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HYG054N09NS1P - N-Channel Enhancement Mode MOSFET

General Description

TO-220FB-3L TO-263-2L N-Channel MOSFET Ordering and Marking Information P G054N09 XYMXXXXXX B G054N09 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation fi

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Datasheet Details

Part number HYG054N09NS1P
Manufacturer HOOYI
File Size 1.31 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG054N09NS1P Datasheet

Full PDF Text Transcription (Reference)

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HYG054N09NS1P/B N-Channel Enhancement Mode MOSFET Feature  85V/135A RDS(ON)= 4.8mΩ(typ.) @VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Available (RoHS Compliant) Applications  Switching application  Motor Control Pin Description TO-220FB-3L TO-263-2L N-Channel MOSFET Ordering and Marking Information P G054N09 XYMXXXXXX B G054N09 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.