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HYG065N07NS1D - N-Channel Enhancement Mode MOSFET

General Description

GDS TO-252-2L GDS TO-251-3L GDS TO-251-3S Applications Switching application Power Management for Inverter Systems Motor control N-Channel MOSFET Ordering and Marking Information D G065N07 XYMXXXXXX U G065N07 XYMXXXXXX V G065N07 XYMXXXXXX Package Code D: TO-252-2L U: TO-2

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Datasheet Details

Part number HYG065N07NS1D
Manufacturer HOOYI
File Size 606.76 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG065N07NS1D Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HYG065N07NS1D/U/V N-Channel Enhancement Mode MOSFET Feature  70V/70A RDS(ON)= 6mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen Free and Green Devices Available (RoHS Compliant) Pin Description GDS TO-252-2L GDS TO-251-3L GDS TO-251-3S Applications  Switching application  Power Management for Inverter Systems  Motor control N-Channel MOSFET Ordering and Marking Information D G065N07 XYMXXXXXX U G065N07 XYMXXXXXX V G065N07 XYMXXXXXX Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.