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HYG180N10LS1B Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: HOOYI

Overview: HYG180N10LS1P&B Single N-Channel Enhancement Mode MOSFET Feature  100V/50A RDS(ON)= 16.5mΩ (typ.) @ VGS = 10V RDS(ON)= 21mΩ (typ.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

TO-220FB-3L TO-263-2L Applications  High Frequency Point-of-Load Synchronous Buck Converter  Power Tool Application Ordering and Marking Information Single N-Channel MOSFET P G180N10 XYMXXXXXX B G180N10 XYMXXXXXX Package Code P: TO-220FB-3L Date Code XYMXXXXXX B: TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish;

which are fully compliant with RoHS.

HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

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