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HYG210P06LQ1U - P-Channel Enhancement Mode MOSFET

Download the HYG210P06LQ1U datasheet PDF. This datasheet also covers the HYG210P06LQ1D variant, as both devices belong to the same p-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

TO-252-2L TO-251-3L TO-251-3S Applications

Power Management in DC/DC converter.

Load switching.

Motor control.

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Note: The manufacturer provides a single datasheet file (HYG210P06LQ1D-HOOYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HYG210P06LQ1U
Manufacturer HOOYI
File Size 1.10 MB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG210P06LQ1U Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HYG210P06LQ1 D/U/V P-Channel Enhancement Mode MOSFET Feature  -60V/-40A RDS(ON)= 19mΩ(typ.)@VGS = -10V RDS(ON)= 25mΩ(typ.)@VGS = -4.5V  100% avalanche tested  Reliable and Rugged  Halogen Free and Green Devices Available (RoHS Compliant) Pin Description TO-252-2L TO-251-3L TO-251-3S Applications  Power Management in DC/DC converter.  Load switching.  Motor control. P-Channel MOSFET Ordering and Marking Information D U V G210P06L G210P06L G210P06L XXXYWXXXXX XXXYWXXXXX XXXYWXXXXX Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S Date Code XXXYWXXXXX Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish; which are fully compliant with RoHS.