Datasheet4U Logo Datasheet4U.com

HYG350P13NA1B - P-Channel Enhancement Mode MOSFET

General Description

TO-263-2L Applications Power Tool Application Networking DC-DC Power System Ordering and Marking Information Single P-Channel MOSFET B G350P13 XYMXXXXXX Package Code B: TO-263-2L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 1

📥 Download Datasheet

Datasheet Details

Part number HYG350P13NA1B
Manufacturer HOOYI
File Size 1.23 MB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG350P13NA1B Datasheet

Full PDF Text Transcription for HYG350P13NA1B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HYG350P13NA1B. For precise diagrams, and layout, please refer to the original PDF.

HYG350P13NA1B Single P-Channel Enhancement Mode MOSFET Feature  -125V/-39A RDS(ON)=35mΩ (typ.) @ VGS = -10V  100% Avalanche Tested  Reliable and Rugged  Lead- Free an...

View more extracted text
S = -10V  100% Avalanche Tested  Reliable and Rugged  Lead- Free and Green Devices Available (RoHS Compliant) Pin Description TO-263-2L Applications  Power Tool Application  Networking DC-DC Power System Ordering and Marking Information Single P-Channel MOSFET B G350P13 XYMXXXXXX Package Code B: TO-263-2L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow t