HOPERF MAS5066
NPN 7GHz wideband transistor
| Part No. | MAS5066 |
|---|---|
| Datasheet | MAS5066 Download |
| Manufacturer |  HOPERF |
| Description | NPN 7GHz wideband transistor |
| Buy | Stock & Price |
FEATURES
Low Noise Figure, High Gain NF=1.1dB,|S21e|2 =12dB(f=1GHZ). SOT-323 / SC-70 package APPLICATION VHF~UHF BAND LOW NOISE AMPLIFIER This item can replace 2SC5066 QUICK REFERENCE DATA SYMBOL PARAMETER ICBO Collector-base Current IEBO Collector-emitter Current hFE DC current gain fT Cob Cre |S21e|2 (1) |S21e|2 (2) Transition frequency Output Capacitance Reverse Transfer Capacitance Insertion Power Gain Insertion Power Gain NF(1) Noise figure NF(2) Noise figure CONDITIONS VCB=10V,IE=0 VEB=1V,IC=0 Ic=10mA Vce=5V ,Tj=25℃ Ic=10mA Vce=5V f=1GHz, Tamb=25℃ Vcb=5 V,IE=0,f=1MHZ Vcb=5 V,IE=0,f=1MHZ VCE=5V, Ic=10mA, f=500MHZ VCE=5V, Ic=10mA, f=1GHZ Ic=3mA, Vce=5V; f=500MHZ; Ic=3mA, Vce=5V; f=1GHZ; MIN. - TYP. - MAX. 1.0 1.0 UNIT uA uA 80 - 240 5 7 - GHZ - 0.7 - pF - 0.45 0.9 pF - 17 - dB 8.5 12 - dB -- 1 - dB - 1.1 2.0 dB LIMITING VALUES(Ta=25℃) SYMBOL PARAMETER CONDITIONS VCBO Collector-base voltage Open emitter VCEO Collector-emitter voltage RBE=0 VEBO Emitter-base voltage Open collector IC DC collector current Ptot Total power dissipation Up to TS =118℃;note 1 Tstg Storage temperature Tj Junction temperature Note 1.
