Description
The 817 series of devices each consist of an infrared emitting diodes, optically coupled to a phototransistor detector encapsulated with green compound.The devices are in a 4-pin DIP package and available in wide-lead spacing and SMD option.
Features
- Current transfer ratio(CTR: 50~600% at IF =5mA, VCE =5V).
- High isolation voltage between inputand output (Viso=5000 V rms ).
- Creepage distance >7.62 mm.
- Operating temperature up to +110℃.
- Compact small outline package
IP.
- Pb free and RoHS compliant.