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2SB1132 - PNP Transistor

Key Features

  • Low VCE(sat): -0.2V(Typ) IC/IB=-500mA/-50mA.
  • Compliments 2SD1664 2SB1132 (PNP) Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature unless otherwise noted) Symbol Value VCBO -40 VCEO -32 VEBO -5 IC 1 PC 500 TJ 150 Tstg -55to +150 Unit V V V A mW.

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Datasheet Details

Part number 2SB1132
Manufacturer HOTTECH
File Size 187.25 KB
Description PNP Transistor
Datasheet download datasheet 2SB1132 Datasheet

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Plastic-Encapsulate Transistors FEATURES • Low VCE(sat): -0.