Complementary the 2SD2150.
2SB1424 (PNP)
Maximum Ratings (Ta=25
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
-20
VCEO
-20
VEBO
-6
IC -3
PC 0.5
Tstg -55to +150
Unit
V V V A W.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Plastic-Encapsulate Transistors
FEATURES
• Low VCE(SAT) =-0.2V(Typ.) (IC/IB=-2A/-0.1mA). • Excellent DC current gain characterisitics. • Complementary the 2SD2150.
2SB1424 (PNP)
Maximum Ratings (Ta=25
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
-20
VCEO
-20
VEBO
-6
IC -3
PC 0.