The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
REPLACEMENT TYPE : 2SD965A
HED965A(NPN)
GENERAL PURPOSE TRANSISTOR
FEATURES Low Collector-Emitter Saturation Voltage Large Collector Power Dissipation and Current Mini Power Type Package
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol Value
Collector-Base Voltage
VCBO
40
Collector-Emitter Voltage
VCEO
20
Emitter-Base Voltage
VEBO
7
Collector Current-Continuous
IC
5
Collector Power Dissipation
PC 750
Thermal Resistance From Junction to Ambient RθJA
167
Junction Temperature
TJ 150
Storage Temperature
Tstg -55 ~150
Unit V V V A
mW °C/W
°C °C
SOT-89 MARKING: 965 1:BASE 2:COLLECTOR 3:EMITTER
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Parameter
Symbol Test conditions
Collector-Base Breakdown Voltage
VCBO
IC=10uA, IE=0
C
2SD965A Datasheet
