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AO3400 - N-Channel MOSFET

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Features

  • The AO3400 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage.

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Datasheet Details

Part number AO3400
Manufacturer HOTTECH
File Size 389.78 KB
Description N-Channel MOSFET
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Plastic-Encapsulate Mosfets FEATURES The AO3400 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits where high side switching. D G S AO3400 N-Channel MOSFET 1.Gate 2.Source 3.
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