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FEATURES
The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
This device is suitable for use as a load switch or in PWM applications.
D
G S
Plastic-Encapsulate Mosfets
AO3401
P-Channel MOSFET
1.Gate 2.Source 3.Drain
SOT-23
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current A
TA=25°C T =70°C
Pulsed Drain Current B
Power Dissipation A
TA=25°C TA=70°C
Junction and Storage Temperature Range
VDS VGS
I IDM PD
TJ, TSTG
Maximum
-30 ±12 -4.2 -3.5 -30 1.