BZT52C16S Product details
This page provides the datasheet information for the BZT52C16S, a member of the BZT52C2V0S Plastic-Encapsulate Diodes family.
Features
- Planar die construction General purpose, Medium current Ideally suited for automated assembly processes Available in Lead free version
BZT52C2V0S---BZT52C39S
-+
SOD-323
Maximum Ratings @ Ta=25℃ unless otherwise specified
Characteristic Forward Voltage
@ IF=10mA
Symbol VF
Value 0.9
Power Dissipation
Pd 200
Thermal resistance,junction to ambient air RθjA 625
Junction temperature
Tj 150
Storage temperature range
Tstg -65-150
Notes: 1. Valid provided that device terminals are kept at a.