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REPLACEMENT TYPE : MMBT2907
FEATURES Epitaxial Planar Die Construction Complementary NPN Type Available(HABT2222)
HABT2907(PNP)
SWITCHING TRANSISTOR
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Collector-Base Voltage
VCBO
-60 V
Collector-Emitter Voltage
VCEO
-40 V
Emitter-Base Voltage
VEBO
-5 V
Collector Current-Continuous
IC
-600
mA
Total Device Dissipation
PC
Thermal Resistance Junction to Ambient RθJA
250 mW 500 °C /W
Junction Temperature
TJ 150 °C
Storage Temperature
Tstg -55 to +150 °C
SOT-23 MARKING:M2B 1: BASE 2:EMITTER 3: COLLECTOR
ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted)
Parameter
Symbol Test conditions
Collector-Base Breakdown Voltage
VCBO
IC=-10μA,IE=0
Collector-Emitter Breakdown Voltage
HABT2907 Datasheet
