The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Plastic-Encapsulate Transistors
FEATURES
Epitaxial planar die construction. Complementary NPN types available
Marking:2GM
MAXIMUM RATINGS (TA=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
-80
VCEO
-80
VEBO
-4
IC 500 PC 300
TJ 150
Tstg -55 to +150
Unit
V V V mA mW
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
arameter
Symbol
Test conditions
ollector-base breakdown voltage
VCBO IC=-100μA,IE=0
Collector-emitter breakdown voltage
VCEO IC=-1.
MMBTA56 Datasheet
