SI2300 - Plastic-Encapsulate Mosfets

Key Features

Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Parameter Symbol Ratings Units Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 8 V Drain Current (Continuous) Drain Current (Pulsed) 1 Total Power Dissipation @TA=25 oC ID 6 A IDM 18 A PD 1.25 W Maximum Diode Forward Current IS 1.6 A Operating Junction and Storage Temperature Rang.

SI2300 plastic-encapsulate mosfets by HOTTECH - Datasheet Preview

Datasheet Details

Part number	SI2300
Manufacturer	HOTTECH
File Size	284.08 KB
Description	Plastic-Encapsulate Mosfets
Datasheet	SI2300 Datasheet

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Plastic-Encapsulate Mosfets FEATURES Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Parameter Symbol Ratings Units Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 8 V Drain Current (Continuous) Drain Current (Pulsed) 1 Total Power Dissipation @TA=25 oC ID 6 A IDM 18 A PD 1.25 W Maximum Diode Forward Current IS 1.6 A Operating Junction and Storage Temperature Range Thermal Resistance Junction to Ambient (PCB mounted)2 Tj, Tstg -55 to +150 °C RθJA 140 °C/W 1: Repetitive Rating: Pulse width limited by the maximum junction temperation.