Datasheet4U Logo Datasheet4U.com

AT-38086 - 4.8V NPN Silicon Bipolar Common Emitter Transistor

General Description

Hewlett Packard’s AT-38086 is a low cost, NPN silicon bipolar junction transistor housed in a surface mount plastic package.

This device is designed for use as a pre-driver or driver device in applications for cellular and wireless communications markets.

Key Features

  • 4.8 Volt Pulsed (pulse width = 577 µsec, duty cycle = 12.5%)/CW Operation.
  • +28 dBm Pulsed Pout @␣ 900␣ MHz,Typ.
  • +23.5 dBm CW Pout @␣ 836.5␣ MHz,Typ.
  • 60% Pulsed Collector Efficiency @ 900 MHz, Typ.
  • 11 dB Pulsed Power Gain @␣ 900 MHz, Typ.
  • -35 dBc IMD3 @ Pout of 17␣ dBm per tone, 900 MHz, Typ.

📥 Download Datasheet

Datasheet Details

Part number AT-38086
Manufacturer HP
File Size 116.27 KB
Description 4.8V NPN Silicon Bipolar Common Emitter Transistor
Datasheet download datasheet AT-38086 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AT-38 Cylinder Quartz Crystal YIC
AT-30511 High Performance NPN Silicon Bipolar Transistors Avago
AT-30533 High Performance NPN Silicon Bipolar Transistors Avago
AT-310 Cylinder Quartz Crystal YIC
AT-31011 High Performance NPN Silicon Bipolar Transistor AVAGO

Other Datasheets by HP

Part Number Description
AT-31625 4.8V NPN Common Emitter Medium Power Output Transistor
AT-33225 4.8V NPN Common Emitter Output Power Transistor
AT-36408 4.8V NPN Common Emitter Output Power Transistor
AT-10650-3 General Purpose Gallium Arsenide FET
AT-41400 Up to 6 GHz Low Noise Silicon Bipolar Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
4.8 V NPN Silicon Bipolar Common␣ Emitter Transistor Technical Data AT-38086 Features • 4.8 Volt Pulsed (pulse width = 577 µsec, duty cycle = 12.5%)/CW Operation • +28 dBm Pulsed Pout @␣ 900␣ MHz,Typ. • +23.5 dBm CW Pout @␣ 836.5␣ MHz,Typ. • 60% Pulsed Collector Efficiency @ 900 MHz, Typ. • 11 dB Pulsed Power Gain @␣ 900 MHz, Typ. • -35 dBc IMD3 @ Pout of 17␣ dBm per tone, 900 MHz, Typ. Applications • Driver Amplifier for GSM and AMPS/ETACS/ 900 MHz NMT Cellular Phones • 900 MHz ISM and Special Mobile Radio 85 mil Plastic Surface Mount Package Outline 86 Pin Configuration 4 EMITTER 1 BASE 2 EMITTER 3 COLLECTOR Description Hewlett Packard’s AT-38086 is a low cost, NPN silicon bipolar junction transistor housed in a surface mount plastic package.