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AT-41485 - Up to 6 GHz Low Noise Silicon Bipolar Transistor

General Description

Agilent’s AT-41485 is a general purpose NPN bipolar transistor that offers excellent high frequency performance.

The AT41485 is housed in a low cost .085" diameter plastic package.

The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions.

Key Features

  • Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.7 dB Typical at 2.0 GHz.
  • High Associated Gain: 18.5 dB Typical at 1.0 GHz 13.5 dB Typical at 2.0 GHz.
  • High Gain-Bandwidth Product: 8.0 GHz Typical fT.

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Datasheet Details

Part number AT-41485
Manufacturer HP
File Size 40.70 KB
Description Up to 6 GHz Low Noise Silicon Bipolar Transistor
Datasheet download datasheet AT-41485 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41485 Features • Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.7 dB Typical at 2.0 GHz • High Associated Gain: 18.5 dB Typical at 1.0 GHz 13.5 dB Typical at 2.0 GHz • High Gain-Bandwidth Product: 8.0 GHz Typical fT Description Agilent’s AT-41485 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT41485 is housed in a low cost .085" diameter plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 14 emitter finger interdigitated geometry yields an interme- diate sized transistor with impedances that are easy to match for low noise and moderate power applications.