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AT-42035 - Up to 6 GHz Medium Power Silicon Bipolar Transistor

General Description

Hewlett-Packard’s AT-42035 is a general purpose NPN bipolar transistor that offers excellent high frequency performance.

The AT-42035 is housed in a cost effective surface mount 100 mil micro-X package.

Key Features

  • High Output Power: 21.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz.
  • High Gain at 1 dB Compression: 14.0 dB Typical G1dBat 2.0␣ GHz 9.5 dB Typical G1 dB at 4.0␣ GHz.
  • Low Noise Figure: 1.9 dB Typical NFOat 2.0␣ GHz.
  • High Gain-Bandwidth Product: 8.0 GHz Typical fT.
  • Cost Effective Ceramic Microstrip Package.

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Datasheet Details

Part number AT-42035
Manufacturer HP
File Size 46.49 KB
Description Up to 6 GHz Medium Power Silicon Bipolar Transistor
Datasheet download datasheet AT-42035 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42035 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz • High Gain at 1 dB Compression: 14.0 dB Typical G1dBat 2.0␣ GHz 9.5 dB Typical G1 dB at 4.0␣ GHz • Low Noise Figure: 1.9 dB Typical NFOat 2.0␣ GHz • High Gain-Bandwidth Product: 8.0 GHz Typical fT • Cost Effective Ceramic Microstrip Package Description Hewlett-Packard’s AT-42035 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42035 is housed in a cost effective surface mount 100 mil micro-X package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions.