ATF-25570 Description
The ATF-25570 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a hermetic, high reliabil- ity package. This device is designed for use in general purpose amplifier and oscillator applications in the 0.5-10 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers.
ATF-25570 Key Features
- High Output Power: 20.5 dBm Typical P1 dB at 4 GHz
- Low Noise Figure: 1.0 dB Typical at 4 GHz
- High Associated Gain: 14.0 dB Typical at 4 GHz
- Hermetic Gold-Ceramic Microstrip Package