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ATF-25570 - 0.5-10 GHz General Purpose Gallium Arsenide FET

General Description

ity package.

This device is designed for use in general purpose amplifier and oscillator applications in the 0.5-10 GHz frequency range.

Key Features

  • High Output Power: 20.5 dBm Typical P1 dB at 4 GHz.
  • Low Noise Figure: 1.0 dB Typical at 4 GHz.
  • High Associated Gain: 14.0 dB Typical at 4 GHz.
  • Hermetic Gold-Ceramic Microstrip Package.

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Datasheet Details

Part number ATF-25570
Manufacturer HP
File Size 34.79 KB
Description 0.5-10 GHz General Purpose Gallium Arsenide FET
Datasheet download datasheet ATF-25570 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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0.5 – 10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25570 Features • High Output Power: 20.5 dBm Typical P1 dB at 4 GHz • Low Noise Figure: 1.0 dB Typical at 4 GHz • High Associated Gain: 14.0 dB Typical at 4 GHz • Hermetic Gold-Ceramic Microstrip Package Description The ATF-25570 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a hermetic, high reliabil- ity package. This device is designed for use in general purpose amplifier and oscillator applications in the 0.5-10 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 500 microns.