HBFP-0420
HBFP-0420 is High Performance Isolated Collector Silicon Bipolar Transistor manufactured by HP.
Features
- Ideal for High Gain, Low Noise Applications
- Transition Frequency f T = 25 GHz
- Typical Performance at 1.8 GHz Associated Gain of 17 d B and Noise Figure of 1.1 d B at 2 V and 5 m A
P1d B of 12 d Bm at 2 V and 20 m A
- Can be Used Without Impedance Matching
Applications
- LNA, Oscillator, Driver Amplifier, Buffer Amplifier, and Down Converter for Cellular and PCS Handsets and Cordless Telephones
- Oscillator for TV Delivery and TVRO Systems up to 10 GHz
Surface Mount Plastic Package/ SOT-343 (SC-70) Outline 4T
Description
Hewlett Packard’s HBFP-0420 is a high performance isolated collector silicon bipolar junction transistor housed in a 4-lead SC-70 (SOT-343) surface mount plastic package.
Pin Configuration
Base
Emitter
HBFP-0420 provides an associated gain of 17 d B, noise figure of 1.1 d B, and P1d B of 12 d Bm at 1.8 GHz. Because of high gain and low current...
