Hewlett-Packard MSA-0185
The MSA-0185 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost plastic package. This MMIC is Typical Biasing Configuration R bias VCC > 7 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 5 V 2 5965-9693E 6-258 MSA-0185 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 40 mA 200 mW +13 dBm 150°C –65 to 150°C Thermal Resistance[2,4]: θjc = 105°C/W Notes: 1.| Part No. | MSA-0185 |
|---|---|
| Datasheet | MSA-0185 Download |
| Manufacturer |  Hewlett-Packard |
| Description | Cascadable Silicon Bipolar MMIC Amplifier |
| Buy | Stock & Price |
FEATURES
● Cascadable 50 Ω Gain Block● 3 dB Bandwidth: DC to 1.0 GHz
● High Gain: 17.5 dB Typical at 0.5 GHz
● Unconditionally Stable (k>1)
● Low Cost Plastic Package designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 85 Plastic Package
DESCRIPTION
Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 9.5 mW/°C for TC > 129°C. 4. See MEASUREMENTS section “Thermal Resistance” for more information. MSA-0185ELECTRICAL SPECIFICATIONS
[1], TA = 25°C Symbol GP ∆ GP f3 dB VSWR NF P1 dB IP3 tD Vd dV/dT Para...
