Hewlett-Packard MSA-0235
The MSA-0235 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package. This MMIC is designed for use as a general Typical Biasing Configuration R bias VCC > 7 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 5 V 2 5965-9697E 6-274 MSA-0235, -0236 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature[4] Absolute Maximum[1] 60 mA 325 mW +13 dBm 200°C –65 to 200°C Thermal Resistance[2,5]: θjc = 145°C/W Notes: 1.| Part No. | MSA-0235 |
|---|---|
| Datasheet | MSA-0235 Download |
| Manufacturer |  Hewlett-Packard |
| Description | Cascadable Silicon Bipolar MMIC Amplifier |
| Buy | Stock & Price |
FEATURES
● Cascadable 50 Ω Gain Block● 3 dB Bandwidth: DC to 2.7 GHz
● 12.0 dB Typical Gain at 1.0␣ GHz
● Unconditionally Stable (k>1)
● Cost Effective Ceramic Microstrip Package purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Available in cut lead version (package 36) as MSA-0236. 35 micro-X Package[1] Note: 1. Short leaded 36 package available upon request.
DESCRIPTION
Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 6.9 mW/°C for TC > 153°C. 4. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit.
