Hewlett-Packard MSA-0370
The MSA-0370 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, high reliability package. This MMIC is designed for use as a general purpose 50 Ω gain block. The MSA-series is fabricated using Agilent’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability.| Part No. | MSA-0370 |
|---|---|
| Datasheet | MSA-0370 Download |
| Manufacturer |  Hewlett-Packard |
| Description | Cascadable Silicon Bipolar MMIC Amplifier |
| Buy | Stock & Price |
FEATURES
● Cascadable 50 Ω Gain Block● 3 dB Bandwidth: DC to 2.8 GHz
DESCRIPTION
Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 70 mil Package● 12.0 dB Typical Gain at 1.0 GHz
● 10.0 dBm Typical P1 dB at 1.0 GHz
● Unconditionally Stable (k>1)
● Hermetic Gold-ceramic Microstrip Package Typical Biasing Configuration R bias VCC > 7 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 5 V 2 2 MSA-0370
ABSOLUTE MAXIMUM RATINGS
Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 80 mA 425 mW +13 dBm 200°C –65 to 200°C Thermal Resistance[2,4]: θjc = 125°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 8 mW/°C for TC > 147°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods.
