Hewlett-Packard MSA-0800
The MSA-0800 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) chip. This MMIC is designed for use as a general purpose 50 Ω gain block above 0.5␣ GHz and can be used as a high gain transistor below this frequency. The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability.| Part No. | MSA-0800 |
|---|---|
| Datasheet | MSA-0800 Download |
| Manufacturer |  Hewlett-Packard |
| Description | Cascadable Silicon Bipolar MMIC Amplifier |
| Buy | Stock & Price |
FEATURES
● Usable Gain to 6.0␣ GHz● High Gain: 32.5 dB Typical at 0.1␣ GHz 23.5 dB Typical at 1.0␣ GHz
● Low Noise Figure: 3.0␣ dB Typical at 1.0␣ GHz
DESCRIPTION
Typical applications include narrow and broad band IF and RF amplifiers in commercial, industrial and military applications. The use of an external bias resistor for temperature and current stability also allows bias flexibility. The recommended assembly procedure is gold-eutectic die attach at 400°C and either wedge or ball bonding using 0.7 mil gold wire.[1] SeeAPPLICATIONS
section, “Chip Use”. Chip Outline[1] Note: 1. Refer to theAPPLICATIONS
section “Silicon MMIC Chip Use” for additional information. Typical Biasing Configuration R bias VCC > 10 V RFC (Optional) C block IN MSA C block OUT Vd = 7.8 V 5965-9595E 6-410 MSA-0800ABSOLUTE MAXIMUM RATINGS
Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 80 mA 750 mW +13 dBm 200°C 200°C Thermal Resistance[2,4]: θjc = 70°C/W Notes: 1.
