Hewlett-Packard MSA-0835
The MSA-0835 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package. This MMIC is designed for use as a general purpose 50 Ω gain block above The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.| Part No. | MSA-0835 |
|---|---|
| Datasheet | MSA-0835 Download |
| Manufacturer |  Hewlett-Packard |
| Description | Cascadable Silicon Bipolar MMIC Amplifier |
| Buy | Stock & Price |
FEATURES
● Usable Gain to 6.0␣ GHz● High Gain: 32.5 dB Typical at 0.1␣ GHz 23.0 dB Typical at 1.0␣ GHz
● Low Noise Figure: 3.0␣ dB Typical at 1.0␣ GHz
● Cost Effective Ceramic Microstrip Package 0.5␣ GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in commercial and industrial applications. 35 micro-X Package[1]
DESCRIPTION
Available in cut lead version (package␣ 36) as MSA-0836. Note: 1. Short leaded 36 package available upon request. Typical Biasing Configuration R bias VCC > 10 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 7.8 V 2 5965-9596E 6-414 MSA-0835, -0836ABSOLUTE MAXIMUM RATINGS
Parameter Device Current Power Dissipation [2,3] RF Input Power Junction Temperature Storage Temperature [4] Absolute Maximum[1] 80 mA 750 mW +13 dBm 200°C –65°C to 200°C Thermal Resistance[2,5]: θjc = 175°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C.
