Hewlett-Packard MSA-0870
The MSA-0870 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, high reliability package. This MMIC is designed for use as a general purpose 50 Ω gain block above 0.5 GHz and can be used as a high gain transistor below this frequency. The use of an external bias resistor for temperature and current stability also allows bias flexibility.| Part No. | MSA-0870 |
|---|---|
| Datasheet | MSA-0870 Download |
| Manufacturer |  Hewlett-Packard |
| Description | Cascadable Silicon Bipolar MMIC Amplifier |
| Buy | Stock & Price |
FEATURES
● Usable Gain to 6.0 GHz● High Gain: 32.5 dB Typical at 0.1 GHz 23.5 dB Typical at 1.0 GHz
DESCRIPTION
Typical applications include narrow and moderate band IF and RF amplifiers in industrial and military applications. 70 mil Package● Low Noise Figure: 3.0 dB Typical at 1.0 GHz
● Hermetic Gold-ceramic Microstrip Package Typical Biasing Configuration R bias VCC > 10 V RFC (Optional) The MSA-series is fabricated using Agilent’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. 4 C block 3 IN 1 MSA C block OUT Vd = 7.8 V 2 2 MSA-0870
ABSOLUTE MAXIMUM RATINGS
Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 80 mA 750 mW +13 dBm 200°C –65°C to 200°C Thermal Resistance[2,4]: θjc = 150°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C.
