Hewlett-Packard MSA-0886
The MSA-0886 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost, surface mount plastic package. This MMIC is designed for use as a general purpose 50 Ω gain block above 0.5 GHz and can be used as a high gain transistor below this frequency. The MSA-series is fabricated using Agilent’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, 86 Plastic Package ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability.| Part No. | MSA-0886 |
|---|---|
| Datasheet | MSA-0886 Download |
| Manufacturer |  Hewlett-Packard |
| Description | Cascadable Silicon Bipolar MMIC Amplifier |
| Buy | Stock & Price |
FEATURES
● Usable Gain to 5.5 GHz● High Gain: 32.5 dB Typical at 0.1 GHz 22.5 dB Typical at 1.0 GHz
● Low Noise Figure: 3.3 dB Typical at 1.0 GHz
● Surface Mount Plastic Package
● Tape-and-Reel Packaging Option Available[1] Note: 1. Refer to PACKAGING section “Tapeand-Reel Packaging for Semiconductor Devices.”
DESCRIPTION
Typical applications include narrow and moderate band IF and RF amplifiers in commercial and industrial applications. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Typical Biasing Configuration R bias VCC > 10 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 7.8 V 2 2 MSA-0886ABSOLUTE MAXIMUM RATINGS
Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 65 mA 500 mW +13 dBm 150°C –65°C to 150°C Thermal Resistance[2,4]: θjc = 140°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 7.1 mW/°C for TC > 80°C.
