Hewlett-Packard MSA-0910
The MSA-0910 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, high reliability package. This MMIC is designed for very wide bandwidth industrial and military applications that require flat gain and low VSWR. The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability.| Part No. | MSA-0910 |
|---|---|
| Datasheet | MSA-0910 Download |
| Manufacturer |  Hewlett-Packard |
| Description | Cascadable Silicon Bipolar MMIC Amplifier |
| Buy | Stock & Price |
FEATURES
● Broadband, Minimum Ripple Cascadable 50 Ω Gain Block● 8.0 ± 0.2 dB Typical Gain Flatness from 0.1 to 4.0 GHz
● 3 dB Bandwidth: 0.1 to 6.0 GHz
● Low VSWR: ≤ 1.5:1 from 0.1 to 4.0␣ GHz
● 11.5 dBm Typical P1dB at 1.0␣ GHz
● Hermetic Gold-ceramic Microstrip Package
DESCRIPTION
The use of an external bias resistor for temperature and current stability also allows bias flexibility. 100 mil Package Typical Biasing Configuration R bias VCC > 12 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 7.8 V 2 5965-9551E 6-434 MSA-0910ABSOLUTE MAXIMUM RATINGS
Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 80 mA 750 mW +13 dBm 200°C –65 to 200°C Thermal Resistance[2,4]: θjc = 145°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 6.9 mW/°C for TC > 91°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods.
