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MSA-1110 Datasheet PDF

Hewlett-Packard MSA-1110

The MSA-1110 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic high reliability package. This MMIC is designed for high dynamic range in either 50 or 75 Ω systems by combining low noise figure with high IP3. The MSA-series is fabricated using Agilent’s 10 GHz fT, 25 GHz fMAX silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability.

MSA-1110 Specifications

  • Package : SMD/SMT
  • Mount Type : Surface Mount
  • Operating Voltage : 5.5V
  • Min Voltage : 4.5V
  • Max Voltage : 6.5V
  • Channels : 1
  • Operating Supply Current : 90mA
  • Max Power Dissipation : 560mW
  • Max Frequency : 1.6GHz
  • Max Operating Temp : 125°C
  • Min Operating Temp : -55°C
  • Nominal Supply Current : 60mA
Source: Octopart
Part No. MSA-1110
Datasheet MSA-1110 Download
Manufacturer
Hewlett-Packard
Description Cascadable Silicon Bipolar MMIC Amplifier
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MSA-1110 datasheet page 1 preview

FEATURES

● High Dynamic Range Cascadable 50 Ω or 75 Ω Gain Block
● 3 dB Bandwidth: 50 MHz to 1.6 GHz
● 17.5 dBm Typical P1 dB at 0.5 GHz
● 12 dB Typical 50 Ω Gain at 0.5 GHz
● 3.5 dB Typical Noise Figure at 0.5 GHz
● Hermetic Gold-ceramic Microstrip Package

DESCRIPTION

Typical applications include narrow and broadband linear amplifiers in industrial and military systems. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 100 mil Package Typical Biasing Configuration R bias VCC > 8 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 5.5 V 2 2 MSA-1110

ABSOLUTE MAXIMUM RATINGS

Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 90 mA 560 mW +13 dBm 200°C –65 to 200°C Thermal Resistance[2, 4]: θjc = 135°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 7.4 mW/°C for TC > 124°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods.
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