Hewlett-Packard MSA0385
The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.| Part No. | MSA0385 |
|---|---|
| Datasheet | MSA0385 Download |
| Manufacturer |  Hewlett-Packard |
| Description | Cascadable Silicon Bipolar MMIC Amplifier |
| Buy | Stock & Price |
FEATURES
● Cascadable 50 Ω Gain Block● 3 dB Bandwidth: DC to 2.5 GHz
● 12.0 dB Typical Gain at 1.0␣ GHz
● 10.0 dBm Typical P1 dB at 1.0␣ GHz
● Unconditionally Stable (k>1)
● Low Cost Plastic Package plastic package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications. 85 Plastic Package
DESCRIPTION
The MSA-0385 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost Typical Biasing Configuration R bias VCC > 7 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 5 V 2 5965-9570E 6-310 MSA-0385ABSOLUTE MAXIMUM RATINGS
Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 70 mA 400 mW +13 dBm 150°C –65 to 150°C Thermal Resistance[2,4]: θjc = 105°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3.
