Hewlett-Packard MSA0635
The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.| Part No. | MSA0635 |
|---|---|
| Datasheet | MSA0635 Download |
| Manufacturer |  Hewlett-Packard |
| Description | Cascadable Silicon Bipolar MMIC Amplifier |
| Buy | Stock & Price |
FEATURES
● Cascadable 50 Ω Gain Block● Low Operating Voltage: 3.5 V Typical Vd
● 3 dB Bandwidth: DC to 0.9 GHz
● High Gain: 19.0␣ dB Typical at 0.5 GHz
● Low Noise Figure: 2.8 dB Typical at 0.5 GHz
● Cost Effective Ceramic Microstrip Package designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications. Available in cut lead version (package 36) as MSA-0636. 35 micro-X Package[1] Note: 1. Short leaded 36 package available upon request.
DESCRIPTION
The MSA-0635 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package. This MMIC is Typical Biasing Configuration R bias VCC > 5 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 3.5 V 2 5965-9585E 6-370 MSA-0635, -0636ABSOLUTE MAXIMUM RATINGS
Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature[4] Absolute Maximum[1] 50 mA 200 mW +13 dBm 200°C –65 to 200°C Thermal Resistance[2,5]: θjc = 155°C/W Notes: 1.
