Hewlett-Packard MSA1104
The MSA-series is fabricated using Agilent’s 10 GHz fT, 25 GHz fMAX silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.| Part No. | MSA1104 |
|---|---|
| Datasheet | MSA1104 Download |
| Manufacturer |  Hewlett-Packard |
| Description | Cascadable Silicon Bipolar MMIC Amplifier |
| Buy | Stock & Price |
FEATURES
● High Dynamic Range Cascadable 50 Ω or 75 Ω Gain Block● 3 dB Bandwidth: 50 MHz to 1.3 GHz
● 17.5 dBm Typical P1 dB at 0.5 GHz
● 12 dB Typical 50 Ω Gain at 0.5 GHz
● 3.6 dB Typical Noise Figure at 0.5 GHz
● Low Cost Plastic Package plastic package. This MMIC is designed for high dynamic range in either 50 or 75 Ω systems by combining low noise figure with high IP3. Typical applications include narrow and broadband linear amplifiers in commercial and industrial systems. 04A Plastic Package
DESCRIPTION
The MSA-1104 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost Typical Biasing Configuration R bias VCC > 8 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 5.5 V 2 2 MSA-1104ABSOLUTE MAXIMUM RATINGS
Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 80 mA 550 mW +1 dBm 150°C –65 to 150°C Thermal Resistance[2,4]: θjc = 115°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded.
