HS70N06PA Overview
The HS70N06 is three-terminal silicon device with current conduction capability of about 70A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching.
HS70N06PA Key Features
- RDS(ON)=15mΩ@VGS=10V
- Ultra low gate charge (typical 90nC)
- Low reverse transfer capacitance
- Fast switching capability
- 100％ avalanche energy specified
- Improved dv/dt capability