HTCSEMI HT03A
Microtriggered low power thyristor
FEATURES
● IT (AV) : 0.3 A● VDRM : 600 V
● IGT : 100 A Outline
● Non-Insulated Type
● Glass Passivation Type DFN−8* D SUFFIX HT03ARDZ-12 MSOP−8 M SUFFIX HT03ARMZ-12 SOP−8 R SUFFIX HT03ARZ-12 TO92 M SUFFIX HT03AM-12 TO-92-3L T SUFFIX HT03ARTZ-12 (Package name:TO-92-3L) 2 321 3 1 1. Cathode 2. Anode 3. Gate
APPLICATIONS
Leakage protector, timer, and gas igniterMAXIMUM RATINGS
Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 DC off-state voltageNote1 Symbol VRRM VRSM VR(DC) VDRM VDSM VD(DC) Voltage class 12 600 800 480 600 800 480 Unit V V V V V V Rev. 00 HT03A Parameter RMS on-state current Average on-state current Symbol IT (RMS) IT (AV) Ratings 0.47 0.3 Surge on-state current I2t for fusing ITSM 20 I2t 1.6 Peak gate power dissipation PGM 0.5 Average gate power dissipation PG (AV) 0.1 Peak gate forward voltage VFGM 6 Peak gate reverse voltage VRGM 6 Peak gate forward current IFGM 0.3 Junction temperature Tj – 40 to +110 Storage temperature Tstg – 40 to +125 Mass — 0.23 Notes: 1.