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20E470K - Metal Oxide Varistor

This page provides the datasheet information for the 20E470K, a member of the 20E180K Metal Oxide Varistor family.

Datasheet Summary

Description

of Part Number VDR - 20 M/E/N 471 K Brand Mark Varistor Voltage Tolerance: K= ±10% Nominal Varistor Voltage: 471=470V DIFFERENT INTERNAL STRUCTURE DISC DIAMETER 20= Φ20MM Delivery Time TMOV Part number Delivery Time Packing Quantity VDR-20M/E/N180K ~ VDR-20M/E/N122K 24days 100PCS Specificat

Features

  • TMOV integrated thermal protection device.
  • High peak surge current rating up to 10KA.
  • Designed to facilitate compliance to UL1449 for TVSS products.
  • Wide operating voltage (V1mA) range from 18V to 1200V.
  • Rated current: 15A.
  • Rated Functioning Temperature:136(℃).
  • Fast responding to transient over-voltage and limited current.
  • Large absorbing transient energy capability.
  • Low clamping ratio and no follow-on current.
  • Meets MSL level 1, per J-STD-020.
  • Operat.

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Datasheet preview – 20E470K

Datasheet Details

Part number 20E470K
Manufacturer HUAAN
File Size 312.65 KB
Description Metal Oxide Varistor
Datasheet download datasheet 20E470K Datasheet
Additional preview pages of the 20E470K datasheet.

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Full PDF Text Transcription

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TMOV 20M(E,N)Series Metal Oxide Varistors Data Sheet Features ·TMOV integrated thermal protection device ·High peak surge current rating up to 10KA ·Designed to facilitate compliance to UL1449 for TVSS products ·Wide operating voltage (V1mA) range from 18V to 1200V ·Rated current: 15A ·Rated Functioning Temperature:136(℃) ·Fast responding to transient over-voltage and limited current ·Large absorbing transient energy capability ·Low clamping ratio and no follow-on current ·Meets MSL level 1, per J-STD-020 ·Operating Temperature：-40℃ ~ +85℃ ·Storage Temperature：-40℃ ~ +85℃ Applications ·AC power line or AC/DC supplies ·Transistor, diode, IC, thyristor or triac semiconductor protection ·Surge protection in consumer electronics ·Surge protection in industrial electronics ·Surge protection in
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