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HAL2814S8 - 2.8V TVS Diode

Key Features

  • 100W peak pulse power (8/20μs).
  • Protects two line pairs (four lines).
  • Ultra low leakage: nA level.
  • Low operating voltage: 2.8V.
  • Ultra low clamping voltage.
  • JEDEC SO-8 package Electrical Characteristics Electrical Characteristics VRWM VBR IR Part Number (max) V V (uA) HAL2814S8 2.8 3 1 Specifications are subject to change without notice HUAAN.

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Datasheet Details

Part number HAL2814S8
Manufacturer HUAAN
File Size 333.76 KB
Description 2.8V TVS Diode
Datasheet download datasheet HAL2814S8 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HAL2814S8 2.8V TVS Diode Array For ESD and Latch-Up Protection APPLICATION ◆Base Station ◆Analog Inputs ◆Switch Systems ◆10/100/1000 Ethernet ◆WAN/LAN Equipment ◆Desktops, Servers, and Notebooks ◆Low Voltage Interfaces IEC COMPATIBILITY Package: SO-8 ◆ IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact) ◆IEC61000-4-5 (Lightning) 10A (8/20μs) FEATURES ◆100W peak pulse power (8/20μs) ◆Protects two line pairs (four lines) ◆Ultra low leakage: nA level ◆Low operating voltage: 2.8V ◆Ultra low clamping voltage ◆JEDEC SO-8 package Electrical Characteristics Electrical Characteristics VRWM VBR IR Part Number (max) V V (uA) HAL2814S8 2.8 3 1 Specifications are subject to change without notice HUAAN LIMITED Co Max value pF 5 Vc @1A Max V 4 1 www.huaandz.