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HMN4013A4 - N-Channel Power MOSFET

Description

The HMN4013A4 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

The package form is TO-252, which accords with the RoHS standard.

Features

  • Fast Switching.
  • Low Gate Charge and RDS(on).
  • Low Reverse transfer capacitances.
  • 100% Single Pulse avalanche energy Test Inner Equivalent Principium Chart.

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Datasheet preview – HMN4013A4

Datasheet Details

Part number HMN4013A4
Manufacturer HUAHONG
File Size 691.05 KB
Description N-Channel Power MOSFET
Datasheet download datasheet HMN4013A4 Datasheet
Additional preview pages of the HMN4013A4 datasheet.

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    HMN4013A4 HM Silicon N-Channel Power MOSFET General Description： The HMN4013A4 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. The package form is TO-252, which accords with the RoHS standard. VDSS ID PD RDS(ON) TYPE 40 V 40 A 34 W 10.
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