• Part: HMP2025ASD
  • Description: HM Silicon P-Channel Power MOSFET
  • Category: MOSFET
  • Manufacturer: HUAHONG
  • Size: 888.34 KB
Download HMP2025ASD Datasheet PDF
HUAHONG
HMP2025ASD
Description : The HMP2025ASD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. The package form is SOP-8, which accords with the Ro HS standard. VDSS ID PD RDS (O N) typ e -20 -8 19 mΩ SOP-8 Features : - RDS(ON) <25mΩ @ VGS=4.5V (Typ 19mΩ) - High density cell design for ultra-low RDS(on) - Fully characterized avalanche voltage and current - Excellent package for good heat dissipation Inner Equivalent Principium Chart Applications: - Power switching application - Hard switched and high frequency circuits - Uninterruptible power supply Package Marking and Ordering Information: Device Marking Device Device Package P2025ASD SOP-8 Quantity 4000 units Absolute Maximum Ratings( TA= 25℃ unless otherwise specified): Symbol Parameter Rating VDSS Drain-to-Source Voltage ID Continuous Drain Current IDM Pulsed Drain Current VGS Gate-to-Source Voltage PD Power...