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CS4J60FA9 - Silicon N-Channel Power MOSFET

Datasheet Summary

Description

CS4J60F A9, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy.

Features

  • Fast Switching.
  • Low Gate Charge.
  • Low Reverse transfer capacitances.
  • 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS4J60FA9
Manufacturer HUAJING MICROELECTRONICS
File Size 534.07 KB
Description Silicon N-Channel Power MOSFET
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Silicon N-Channel Power MOSFET CS4J60F A9 General Description: CS4J60F A9, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package type is TO-220F, which accords with the RoHS standard. VDSS ID PD(TC=25℃) RDS(ON)Typ Features:  Fast Switching  Low Gate Charge  Low Reverse transfer capacitances  100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): ○R 600 V 4A 25 W 1.
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