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CS5J65B4-G - Silicon N-Channel Power MOSFET

General Description

CS5J65 B4-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free.

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Datasheet Details

Part number CS5J65B4-G
Manufacturer HUAJING MICROELECTRONICS
File Size 354.60 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS5J65B4-G Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon N-Channel Power MOSFET CS5J65 B4-G General Description： CS5J65 B4-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package type is TO-252, which accords with the RoHS standard. VDSS ID PD(TC=25℃) RDS(ON)Typ Features： l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： ○R 650 V 5A 72 W 0.