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CSF501D - Silicon N-Channel Power MOSFET

Datasheet Summary

Features

  • l N-Channel l ESD improved Capability l Depletion Mode l dv/dt rated l Pb-free lead plating;ROHS compliant l Halogen Free VDSX IDSS,min RDS(ON),max 600 0.012 700 V A Ω Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSX ID ID a1 M VGS dv/dt a2 PD VESD(G-S) TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC =70 °C Pulsed Drain Current Gate-to-Source Voltage Peak Diode Recovery dv/dt Power Dissipation Gate source ESD (HBM-C= 100pF.

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Datasheet Details

Part number CSF501D
Manufacturer HUAJING MICROELECTRONICS
File Size 497.73 KB
Description Silicon N-Channel Power MOSFET
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    Silicon N-Channel Power MOSFET CSF501D ○R Features： l N-Channel l ESD improved Capability l Depletion Mode l dv/dt rated l Pb-free lead plating;ROHS compliant l Halogen Free VDSX IDSS,min RDS(ON),max 600 0.012 700 V A Ω Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSX ID ID a1 M VGS dv/dt a2 PD VESD(G-S) TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC =70 °C Pulsed Drain Current Gate-to-Source Voltage Peak Diode Recovery dv/dt Power Dissipation Gate source ESD (HBM-C= 100pF, R=1.5kΩ) Operating Junction and Storage Temperature Range MaximumTemperature for Soldering Rating 600 0.030 0.024 0.120 ±20 5.0 0.
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