CSF501D Datasheet | HUAJING MICROELECTRONICS

atures： l N-Channel l ESD improved Capability l Depletion Mode l dv/dt rated l Pb-free lead plating;ROHS pliant l Halogen Free VDSX IDSS,min RDS(ON),max 600 0.012 700 V A Ω Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSX ID a1 VGS dv/dt a2 VESD(G-S) TJ，Tstg Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC =70 °C Pulsed Drain Current Gate-to-Source Voltage Peak Diode Recovery dv/dt Power Dissipation Gate source ESD (HBM-C= 100p F, R=1.5kΩ) Operating Junction and Storage Temperature Range Maximum Temperature for Soldering Rating 600 0.030 0.024 0.120 ±20 5.0 0.5 150，- 55 to 150 300 Units V A A A V V/ns W ℃ ℃ Electrical Characteristics（Tc= 25℃ unless otherwise specified）： OFF Characteristics Symbol Parameter Test Conditions VDSX ID(off) IGSS(F) IGSS(R) Drain to Source Breakdown Voltage VGS=-5V, ID=250µA Off-state Drain...