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CSF501D Datasheet Silicon N-channel Power MOSFET

Manufacturer: HUAJING MICROELECTRONICS

Overview: Silicon N-Channel Power MOSFET CSF501D ○R.

Key Features

  • l N-Channel l ESD improved Capability l Depletion Mode l dv/dt rated l Pb-free lead plating;ROHS compliant l Halogen Free VDSX IDSS,min RDS(ON),max 600 0.012 700 V A Ω Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSX ID ID a1 M VGS dv/dt a2 PD VESD(G-S) TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC =70 °C Pulsed Drain Current Gate-to-Source Voltage Peak Diode Recovery dv/dt Power Dissipation Gate source ESD (HBM-C= 100pF.

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Part Number Description

CSF501D Distributor