| Part number | HPA600R1K0DN |
|---|---|
| Datasheet | HPA600R1K0DN-HUAJINGMICROELECTRONICS.pdf |
| File Size | 390.64 KB |
| Manufacturer | HUAJING MICROELECTRONICS |
| Description | Silicon N-Channel Power MOSFET |
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： HPA600R1K0DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard.
See all HUAJING MICROELECTRONICS datasheets
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|---|---|
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