HPA700R1K3SA, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy.
Key Features
l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test.
Full PDF Text Transcription for HPA700R1K3SA (Reference)
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Silicon N-Channel Power MOSFET HPA700R1K3SA ○R General Description： HPA700R1K3SA, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology whi...
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nel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package type is TO-220F, which accords with the RoHS standard. VDSS ID PD(TC=25℃) RDS(ON)Typ Features： l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： 700 V 6A 25 W 0.
HPA700R1K3SA Datasheet
