HPD650R600SA - Silicon N-Channel Power MOSFET

Product Overview

HUAJING MICROELECTRONICS

Datasheet Details

Part number	HPD650R600SA
Manufacturer	HUAJING MICROELECTRONICS
File Size	349.65 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	HPD650R600SA Datasheet
Additional preview pages of the HPD650R600SA datasheet.

Product details

Description

HPD650R600SA, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy.

Features

l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test.

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Published: Mar 22, 2018 |