HPD650R600SA, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy.
Key Features
l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test.
Full PDF Text Transcription for HPD650R600SA (Reference)
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Silicon N-Channel Power MOSFET HPD650R600SA ○R General Description： HPD650R600SA, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology whi...
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nel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package type is TO-252, which accords with the RoHS standard. VDSS ID PD(TC=25℃) RDS(ON)typ Features： l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： 650 V 9A 125 W 0.
HPD650R600SA Datasheet
