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HPD700R1K3SA - Silicon N-Channel Power MOSFET

General Description

HPD700R1K3SA, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 700 V 6A 94 W 0.95 Ω.

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Datasheet Details

Part number HPD700R1K3SA
Manufacturer HUAJING MICROELECTRONICS
File Size 422.67 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet HPD700R1K3SA Datasheet

Full PDF Text Transcription for HPD700R1K3SA (Reference)

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Silicon N-Channel Power MOSFET HPD700R1K3SA ○R General Description： HPD700R1K3SA, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology whi...

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nel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package type is TO-252, which accords with the RoHS standard. Features： l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 700 V 6A 94 W 0.95 Ω Applications： Power switch circuit of adaptor and charger.

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