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Silicon N-Channel Power MOSFET HPD700R1K3SA
○R
General Description：
HPD700R1K3SA, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package type is TO-252, which accords with the RoHS standard.
Features：
l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test
VDSS ID PD(TC=25℃) RDS(ON)Typ
700 V 6A 94 W
0.95 Ω
Applications：
Power switch circuit of adaptor and charger.
HPD700R1K3SA Datasheet
