HPD700R1K3SA - Silicon N-Channel Power MOSFET

Product Overview

HUAJING MICROELECTRONICS

Datasheet Details

Part number	HPD700R1K3SA
Manufacturer	HUAJING MICROELECTRONICS
File Size	422.67 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	HPD700R1K3SA Datasheet
Additional preview pages of the HPD700R1K3SA datasheet.

Product details

Description

HPD700R1K3SA, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy.

Features

l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 700 V 6A 94 W 0.95 Ω.

📁 Similar Datasheet

HPD700R320PC-G - Silicon N-Channel Power MOSFET (CR Micro)
HPD700R450PC-G - Silicon N-Channel Power MOSFET (CR Micro)
HPD700R700PC-G - Silicon N-Channel Power MOSFET (CR Micro)
HPD025N03STA - 30V 180A N-CHANNEL POWER MOSFET (HAOHAI)
HPD600R280PC-G - Silicon N-Channel Power MOSFET (CR Micro)
HPD600R380PC-G - Silicon N-Channel Power MOSFET (CR Micro)
HPD600R600PC-G - Silicon N-Channel Power MOSFET (CR Micro)
HPD650R300PC-G - Silicon N-Channel Power MOSFET (CR Micro)

Other Datasheets by HUAJING MICROELECTRONICS

HPD600R2K3DN - Silicon N-Channel Power MOSFET
HPD600R700DN - Silicon N-Channel Power MOSFET
HPD650R1K1DN - Silicon N-Channel Power MOSFET
HPD650R1K9DN - Silicon N-Channel Power MOSFET
HPD650R600SA - Silicon N-Channel Power MOSFET

Published: Mar 22, 2018 |