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HPL650R1K9DN - Silicon N-Channel Power MOSFET

General Description

performance and enhance the avalanche energy.

Key Features

  • l Superior switching performance l Low on resistance(Rdson≤1.9Ω) l Low gate charge (Typical Data:13.4nC) l Low reverse transfer capacitances(Typical:5.6pF) l 100% Single pulse avalanche energy test.

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Datasheet Details

Part number HPL650R1K9DN
Manufacturer HUAJING MICROELECTRONICS
File Size 398.91 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet HPL650R1K9DN Datasheet

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Silicon N-Channel Power MOSFET HPL650R1K9DN ○R General Description： HPL650R1K9DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-262, which accords with the RoHS standard. Features： l Superior switching performance l Low on resistance(Rdson≤1.9Ω) l Low gate charge (Typical Data:13.4nC) l Low reverse transfer capacitances(Typical:5.6pF) l 100% Single pulse avalanche energy test Applications： Power switch circuit of adaptor and charger.