HPL650R1K9DN - Silicon N-Channel Power MOSFET

Product Overview

HUAJING MICROELECTRONICS

Datasheet Details

Part number	HPL650R1K9DN
Manufacturer	HUAJING MICROELECTRONICS
File Size	398.91 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	HPL650R1K9DN Datasheet
Additional preview pages of the HPL650R1K9DN datasheet.

Product details

Description

HPL650R1K9DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-262, which accords with the RoHS standard.

Features

l Superior switching performance l Low on resistance(Rdson≤1.9Ω) l Low gate charge (Typical Data:13.4nC) l Low reverse transfer capacitances(Typical:5.6pF) l 100% Single pulse avalanche energy test.

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Other Datasheets by HUAJING MICROELECTRONICS

Published: Mar 22, 2018 |