l Superior switching performance l Low on resistance(Rdson≤2.3Ω) l Low gate charge (Typical Data:11.5nC) l Low reverse transfer capacitances(Typical:5.8pF) l 100% Single pulse avalanche energy test.
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Silicon N-Channel Power MOSFET HPU600R2K3DN ○R General Description： HPU600R2K3DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology wh...
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nel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard. Features： l Superior switching performance l Low on resistance(Rdson≤2.3Ω) l Low gate charge (Typical Data:11.5nC) l Low reverse transfer capacitances(Typical:5.8pF) l 100% Single pulse avalanche energy test Applications： Power switch circuit of adaptor and charger.
HPU600R2K3DN Datasheet
