HPU650R600SA, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy.
Key Features
l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test.
Full PDF Text Transcription for HPU650R600SA (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
HPU650R600SA. For precise diagrams, and layout, please refer to the original PDF.
Silicon N-Channel Power MOSFET HPU650R600SA ○R General Description： HPU650R600SA, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology whi...
View more extracted text
nel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package type is TO-251, which accords with the RoHS standard. VDSS ID PD(TC=25℃) RDS(ON)typ Features： l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： 650 V 9A 125 W 0.
HPU650R600SA Datasheet
